RADIATIVE RECOMBINATION AT THERMAL DEFECTS IN OXYGEN-DOPED GERMANIUM

被引:0
作者
BYKOVSKII, VA
MUDRYI, AV
POSKREBYSHEV, VP
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SOVIET PHYSICS SEMICONDUCTORS-USSR | 1982年 / 16卷 / 02期
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O469 [凝聚态物理学];
学科分类号
070205 ;
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页码:220 / 221
页数:2
相关论文
共 8 条
[1]   OXYGEN AS A DONOR ELEMENT IN GERMANIUM [J].
ELLIOTT, G .
NATURE, 1957, 180 (4598) :1350-1351
[2]   THE IONIZATION BEHAVIOR OF DONORS FORMED FROM OXYGEN IN GERMANIUM [J].
FULLER, CS ;
DOLEIDEN, FH .
JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1961, 19 (3-4) :251-260
[3]  
GONCHAROV LA, 1977, PROPERTIES DOPED SEM, P9
[4]   MECHANISM OF THE FORMATION OF DONOR STATES IN HEAT-TREATED SILICON [J].
KAISER, W ;
FRISCH, HL ;
REISS, H .
PHYSICAL REVIEW, 1958, 112 (05) :1546-1554
[5]   SHELL-MODEL OF BOUND MULTIEXCITON COMPLEXES IN SILICON [J].
KIRCZENOW, G .
CANADIAN JOURNAL OF PHYSICS, 1977, 55 (20) :1787-1801
[6]   RECOMBINATION OF DONOR BOUND-EXCITONS IN GERMANIUM [J].
KLINGENSTEIN, W ;
SCHMID, W .
PHYSICAL REVIEW B, 1979, 20 (08) :3285-3291
[7]   BOUND-EXCITON LUMINESCENCE AND ABSORPTION IN PHOSPHORUS-DOPED GERMANIUM [J].
MAYER, AE ;
LIGHTOWLERS, EC .
JOURNAL OF PHYSICS C-SOLID STATE PHYSICS, 1979, 12 (13) :L539-L544
[8]  
Stoneham A. M., 1975, THEORY DEFECTS SOLID