MAGNETORESISTANCE IN FE-SI FILMS GROWN BY MOLECULAR-BEAM EPITAXY

被引：8

作者：

HIGHMORE, RJ ^{[1
]}

YUSU, K ^{[1
]}

OKUNO, SN ^{[1
]}

SAITO, Y ^{[1
]}

INOMATA, K ^{[1
]}

机构：

[1] TOSHIBA CO LTD,CTR RES & DEV,ADV RES LAB,SAIWAI KU,KAWASAKI,KANAGAWA,JAPAN

来源：

JOURNAL OF MAGNETISM AND MAGNETIC MATERIALS | 1995年 / 151卷 / 1-2期

关键词：

D O I：

10.1016/0304-8853(95)00398-3

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

We have used molecular beam epitaxy apparatus to grow Fe-Si films. The films were grown by first depositing a nominal 40 Angstrom of Fe, then a nominal thickness of Si, then a further nominal 40 Angstrom of Fe. A plot of the ratio (remanent magnetisation/saturation magnetization) versus nominal Si layer thickness shows a minimum for a nominal thickness of 25 Angstrom, and a plot of saturation field versus nominal Si thickness has a maximum for a nominal thickness of 20 Angstrom. We find a room temperature magnetoresistance of more than 2% in films with nominal Si layer thicknesses of 20 Angstrom. Raising the temperature causes a decrease in (remanent magnetization/saturation magnetisation) for films with nominal Si thicknesses of 20 Angstrom and 25 Angstrom.

引用

页码：95 / 101

页数：7

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