ION BEAM-ASSISTED ETCHING OF ALUMINUM WITH CHLORINE

被引：4

作者：

TSOU, LY ^{[1
]}

机构：

[1] AT&T TECHNOL INC,PRINCETON,NJ 08540

来源：

JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 1985年 / 132卷 / 08期

关键词：

D O I：

10.1149/1.2114271

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

引用

页码：2010 / 2012

页数：3

共 13 条

[1]

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[2]

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[8] INVESTIGATION OF PLASMA-ETCHING MECHANISMS USING BEAMS OF REACTIVE GAS IONS [J].

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[9]

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[10] ANISOTROPIC-PLASMA ETCHING OF POLYSILICON [J].

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