LUMINESCENCE OF ERBIUM IMPLANTED IN VARIOUS SEMICONDUCTORS - IV-MATERIALS, III-V-MATERIALS AND II-VI MATERIALS

被引：402

作者：

FAVENNEC, PN

LHARIDON, H

SALVI, M

MOUTONNET, D

LEGUILLOU, Y

机构：

[1] CNET/LAB/OCM, France

来源：

ELECTRONICS LETTERS | 1989年 / 25卷 / 11期

关键词：

D O I：

10.1049/el:19890486

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：718 / 719

页数：2

共 6 条

[1] 1.54-MU-M LUMINESCENCE OF ERBIUM-IMPLANTED III-V SEMICONDUCTORS AND SILICON [J].

ENNEN, H ;

SCHNEIDER, J ;

POMRENKE, G ;

AXMANN, A .

APPLIED PHYSICS LETTERS, 1983, 43 (10) :943-945

[2] NONDIFFUSION AND 1.54 MU-M LUMINESCENCE OF ERBIUM IMPLANTED IN INP [J].

FAVENNEC, PN ;

LHARIDON, H ;

LECORRE, A ;

SALVI, M ;

GAUNEAU, M .

ELECTRONICS LETTERS, 1987, 23 (13) :684-686

[3]

POMRENKE G, 1986, J APPL PHYS, V59, P610

[4] ERBIUM IMPLANTED IN III-V MATERIALS [J].

ROCHAIX, C ;

ROLLAND, A ;

FAVENNEC, PN ;

LAMBERT, B ;

LECORRE, A ;

LHARIDON, H ;

SALVI, M .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 1988, 27 (12) :L2348-L2350

[5] BEHAVIOR OF ERBIUM IMPLANTED IN INP [J].

ROCHAIX, C ;

ROLLAND, A ;

FAVENNEC, PN ;

LAMBERT, B ;

LECORRE, A ;

LHARIDON, H ;

SALVI, M .

JOURNAL OF ELECTRONIC MATERIALS, 1988, 17 (05) :351-354

[6] OBSERVATION OF ENHANCED SINGLE LONGITUDINAL MODE-OPERATION IN 1.5-MU-M GAINASP ERBIUM-DOPED SEMICONDUCTOR INJECTION-LASERS [J].

TSANG, WT ;

LOGAN, RA .

APPLIED PHYSICS LETTERS, 1986, 49 (25) :1686-1688

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