EFFECT OF COMPENSATION ON BREAKDOWN FIELDS IN HOMOGENEOUS SEMICONDUCTORS

被引：31

作者：

COHEN, ME

LANDSBERG, PT

机构：

来源：

PHYSICAL REVIEW | 1967年 / 154卷 / 03期

关键词：

D O I：

10.1103/PhysRev.154.683

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

引用

页码：683 / +

页数：1

共 28 条

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