CYCLOTRON MASS OF 2-DIMENSIONAL HOLES IN STRAINED-LAYER GAAS/IN0.20GA0.80AS/GAAS QUANTUM-WELL STRUCTURES

被引：13

作者：

LIN, SY ^{[1
]}

WEI, HP ^{[1
]}

TSUI, DC ^{[1
]}

KLEM, JF ^{[1
]}

机构：

[1] PRINCETON UNIV,DEPT ELECT ENGN,PRINCETON,NJ 08544

来源：

APPLIED PHYSICS LETTERS | 1995年 / 67卷 / 15期

关键词：

D O I：

10.1063/1.115092

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We report a systematic study of the effective mass of two-dimensional (2D) holes in a series of ten p-type GaAs/In0.20Ga0.80As/GaAs quantum well structure samples. The 2D hole density and its effective mass (m*)are independently determined from Shubnikov-de Haas and cyclotron resonance measurements at 4.2 K. We find the m* increases from (0.123 +/- 0.005) m(e) to (0.191 +/- 0.015) m(e) as the 2D hole density is varied from 0.54 x 10(11)/cm(2) to 8.5 x 10(11)/cm(2). The experimental data are described quantitatively in terms of a two-band tight binding model using the valence band edge mass and strain-induced valence band splitting as parameters. (C) 1995 American Institute of Physics.

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页码：2170 / 2172

页数：3

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