HIGHLY REPRODUCIBLE FABRICATION TECHNOLOGY FOR PASSIVATED ALGAAS/GAAS HETEROJUNCTION BIPOLAR-TRANSISTORS WITH PT/TI/PT/AU BASE ELECTRODES

被引：1

作者：

HONGO, S

SUGIYAMA, T

KURIYAMA, Y

IIZUKA, N

OBARA, M

机构：

[1] Toshiba Research and Development Center, Saiwai-ku Kawasaki, 210, 1, Komukai Toshiba-cho

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | 1995年 / 34卷 / 2B期

关键词：

HETEROJUNCTION BIPOLAR TRANSISTOR; HBT; SURFACE PASSIVATION; PASSIVATED HBT; ALGAAS; PT; SELECTIVE ETCHING; CITRIC ACID;

D O I：

10.1143/JJAP.34.1181

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

A highly reproducible fabrication technology for passivated heterojunction bipolar transistors (HBT's) has been developed. A thermally stable Pt/Ti/Pt/Au base electrode metal penetrates through the Al0.3Ga0.7As emitter layer to contact the base layer. This feature leads to the formation of the base passivation layer. A citric-acidbased selective etchant eliminates the ambiguity of etching and thus confirms the reproducibility of passivation layer thickness. The excess base leakage current density was reduced to about 1 mu A/mu m.

引用

页码：1181 / 1184

页数：4

共 21 条

[1] ULTRA-LOW RESISTANCE BASE OHMIC CONTACT WITH PT/TI/PT/AU FOR HIGH-F(MAX) ALGAAS/GAAS HETEROJUNCTION BIPOLAR-TRANSISTORS
SUGIYAMA, T
KURIYAMA, Y
ASAKA, M
IIZUKA, N
KOBAYASHI, T
OBARA, M
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1994, 33 (1B): : 786 - 789
[2] CHANGES IN COLLECTOR AND BASE CURRENTS FOR ALGAAS/GAAS HETEROJUNCTION BIPOLAR-TRANSISTORS
IIZUKA, N
SUGIYAMA, T
OBARA, M
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1994, 33 (6A): : 3377 - 3382
[3] CARBON AND INDIUM CODOPING IN GAAS FOR RELIABLE ALGAAS/GAAS HETEROJUNCTION BIPOLAR-TRANSISTORS
NITTONO, T
WATANABE, N
ITO, H
SUGAHARA, H
NAGATA, K
NAKAJIMA, O
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 1994, 33 (11): : 6129 - 6135
[4] NOVEL FABRICATION OF SELF-ALIGNED GAAS/ALGAAS AND GAAS/INGAP MICROWAVE-POWER HETEROJUNCTION BIPOLAR-TRANSISTORS
REN, F
ABERNATHY, CR
PEARTON, SJ
YANG, LW
FU, ST
SOLID-STATE ELECTRONICS, 1995, 38 (09) : 1635 - 1639
[5] EFFECTS OF HEAVILY CARBON-DOPED BASE LAYERS ON PERFORMANCE OF SUBMICRON ALGAAS GAAS HETEROJUNCTION BIPOLAR-TRANSISTORS
YANG, LW
WRIGHT, PD
SHEN, H
LU, Y
BRUSENBACK, PR
KO, SK
CALDERON, L
HARTZLER, WD
HAN, WY
DUTTA, M
CHANG, WH
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 1993, 32 (10A): : L1400 - L1402
[6] SIMULATION OF THE EFFECT OF EMITTER DOPING ON THE DELAY TIME IN ALGAAS/GAAS HETEROJUNCTION BIPOLAR-TRANSISTORS
KUSANO, C
MASUDA, H
MOCHIZUKI, K
MIZUTA, H
YAMAGUCHI, K
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 1992, 31 (12A): : L1650 - L1653
[7] INFLUENCE OF MINORITY HOLE INJECTION ON CURRENT GAIN CHARACTERISTICS IN ALGAAS/GAAS HETEROJUNCTION BIPOLAR-TRANSISTORS
ITO, H
NAGATA, K
NAKAJIMA, O
ISHIBASHI, T
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 1994, 33 (10A): : L1389 - L1392
[8] OBSERVATION OF THE SURFACE RECOMBINATION CURRENT WITH AN IDEALITY FACTOR OF UNITY IN ALGAAS/GAAS HETEROJUNCTION BIPOLAR-TRANSISTORS
MOCHIZUKI, K
MASUDA, H
KAWATA, M
MITANI, K
KUSANO, C
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1991, 30 (2B): : L266 - L268
[9] CURRENT-INDUCED DEGRADATION OF ALGAAS/GAAS HETEROJUNCTION BIPOLAR-TRANSISTORS AND ITS SUPPRESSION BY THERMAL ANNEALING IN AS OVERPRESSURE
NAKAJIMA, O
ITO, H
NITTONO, T
NAGATA, K
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 1992, 31 (08): : 2343 - 2348
[10] AN ADVANTAGE OF PNP OVER NPN ALGAAS/GAAS HETEROJUNCTION BIPOLAR-TRANSISTORS FOR MICROWAVE-POWER APPLICATIONS
LIU, W
DAI, CH
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1992, 31 (4B): : L452 - L454

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