THE SENSITIVITY OF THE GAIN OF A LOW-NOISE TRANSISTOR-AMPLIFIER TO A CHANGE IN THE SIGNAL SOURCE ADMITTANCE

被引:0
|
作者
NEMLIKHER, YA
RUKAVITSYN, AF
STRUKOV, IA
机构
关键词
LOW-NOISE TRANSISTOR AMPLIFIER; SIGNAL-SOURCE ADMITTANCE; NOISE TEMPERATURE; SENSITIVITY;
D O I
暂无
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
Theoretical relations are obtained and an analysis is given of the sensitivity of the nominal gain to variations in the admittance of the signal source for a transistor optimized with respect to the measure of the noise. Numerical values of the sensitivities of some types of transistors are presented.
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页码:96 / 99
页数:4
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