RADIATION-DAMAGE EFFECTS OF ELECTRONS AND H, HE, O, CL AND CU IONS ON GAAS JFETS

被引：15

作者：

KNUDSON, AR ^{[1
]}

CAMPBELL, AB ^{[1
]}

STAPOR, WJ ^{[1
]}

SHAPIRO, P ^{[1
]}

MUELLER, GP ^{[1
]}

ZULEEG, R ^{[1
]}

机构：

[1] MCDONNELL DOUGLAS CORP,CTR MICROELECTR,HUNTINGTON BEACH,CA 92047

来源：

IEEE TRANSACTIONS ON NUCLEAR SCIENCE | 1985年 / 32卷 / 06期

关键词：

D O I：

10.1109/TNS.1985.4334129

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：4388 / 4392

页数：5

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[8] SINGLE EVENT UPSET MEASUREMENTS OF GAAS E-JFET RAMS [J].

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