FORMATION OF SHALLOW P+N JUNCTIONS BY B-ION IMPLANTATION IN SI SUBSTRATES WITH AMORPHOUS LAYERS

被引：12
作者：
ISHIWARA, H
HORITA, S
机构：
来源：
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | 1985年 / 24卷 / 05期
关键词：
D O I：
10.1143/JJAP.24.568
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
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页码：568 / 573
页数：6
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