TITANIUM DISULFIDE THIN-FILM PREPARED BY PLASMA CVD

被引：27

作者：

KIKKAWA, S ^{[1
]}

MIYAZAKI, M ^{[1
]}

KOIZUMI, M ^{[1
]}

机构：

[1] RYUKOKU UNIV,FAC SCI & TECHNOL,OTSU,SHIGA 52021,JAPAN

来源：

JOURNAL OF MATERIALS RESEARCH | 1990年 / 5卷 / 12期

关键词：

D O I：

10.1557/JMR.1990.2894

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Titanium disulfide films were prepared by plasma CVD. Crystalline orientation of layered TiS2 was investigated in relation to deposition rate, film thickness, and kinds of substrate. The preferred orientation of TiS2basal plane perpendicular to substrates was obtained on the films with their thickness of more than ca. 10 μm at the deposition rate of ca. 4 x 10–3 g/cm2. h on all kinds of substrate. This orientation resulted in a large discharge capacity in a lithium battery cathode application. © 1990, Materials Research Society. All rights reserved.

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页码：2894 / 2901

页数：8

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