CRYSTAL-GROWTH AND DISLOCATION-STRUCTURE OF GALLIUM ANTIMONIDE

被引：36
作者：
MORAVEC, F
SESTAKOVA, V
STEPANEK, B
CHARVAT, V
机构：
来源：
CRYSTAL RESEARCH AND TECHNOLOGY | 1989年 / 24卷 / 03期
关键词：
D O I：
10.1002/crat.2170240307
中图分类号：
O7 [晶体学];
学科分类号：
0702 ; 070205 ; 0703 ; 080501 ;
摘要：
引用
收藏
页码：275 / 281
页数：7
相关论文
共 14 条
[1]   ANISOTROPIC SEGREGATION IN INSB [J].
ALLRED, WP ;
BATE, RT .
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1961, 108 (03) :258-261
[2]   STUDIES OF THE GA1-XINXAS1-YSBY QUATERNARY ALLOY SYSTEM .1. LIQUID-PHASE EPITAXIAL-GROWTH AND ASSESSMENT [J].
ASTLES, M ;
HILL, H ;
WILLIAMS, AJ ;
WRIGHT, PJ ;
YOUNG, ML .
JOURNAL OF ELECTRONIC MATERIALS, 1986, 15 (01) :41-49
[3]   THE CZOCHRALSKI GROWTH OF GALLIUM ANTIMONIDE SINGLE-CRYSTALS UNDER REDUCING CONDITIONS [J].
COCKAYNE, B ;
STEWARD, VW ;
BROWN, GT ;
MACEWAN, WR ;
YOUNG, ML ;
COURTNEY, SJ .
JOURNAL OF CRYSTAL GROWTH, 1982, 58 (01) :267-272
[4]   A MODEL FOR THE DETERMINATION OF THE DEFECT CONCENTRATIONS IN III-V-COMPOUNDS - THE CASE OF GASB [J].
EDELIN, G ;
MATHIOT, D .
PHILOSOPHICAL MAGAZINE B-PHYSICS OF CONDENSED MATTER STATISTICAL MECHANICS ELECTRONIC OPTICAL AND MAGNETIC PROPERTIES, 1980, 42 (01) :95-110
[5]   GROWTH OF LOW DISLOCATION DENSITY GASB SINGLE-CRYSTALS BY CZOCHRALSKI METHOD [J].
HIRAI, I ;
OBOKATA, T .
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1982, 21 (06) :956-957
[6]   LEC GROWTH OF GASB SINGLE-CRYSTALS USING BORIC OXIDE [J].
KATSUI, A ;
UEMURA, C .
JAPANESE JOURNAL OF APPLIED PHYSICS, 1980, 19 (06) :L318-L320
[7]   GASB SINGLE-CRYSTAL GROWTH IN (111) DIRECTION [J].
KATSUI, A ;
UEMURA, C .
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1982, 21 (07) :1106-1106
[8]   LOW DISLOCATION DENSITY GASB SINGLE-CRYSTALS GROWN BY LEC TECHNIQUE [J].
KONDO, S ;
MIYAZAWA, S .
JOURNAL OF CRYSTAL GROWTH, 1982, 56 (01) :39-44
[9]   THERMODYNAMIC CONSIDERATIONS IN THE SYNTHESIS AND CRYSTAL-GROWTH OF GASB [J].
MCAFEE, KB ;
GAY, DM ;
HOZACK, RS ;
LAUDISE, RA ;
SCHWARTZ, G ;
SUNDER, WA .
JOURNAL OF CRYSTAL GROWTH, 1986, 76 (02) :263-271
[10]   A NOVEL ENCAPSULANT MATERIAL FOR LEC GROWTH OF GASB [J].
MIYAZAWA, S ;
KONDO, S ;
NAGANUMA, M .
JOURNAL OF CRYSTAL GROWTH, 1980, 49 (04) :670-674
12