NOVEL CALCULATIONS IN THE FIELD OF ACCURATE ANALYTICAL MOS-TRANSISTOR MODELING

被引：0
作者：
LAUWERS, L
DEMEYER, K
机构：
来源：
JOURNAL DE PHYSIQUE | 1988年 / 49卷 / C-4期
关键词：
D O I：
10.1051/jphyscol:1988451
中图分类号：
学科分类号：
摘要：
引用
收藏
页码：249 / 252
页数：4
相关论文
共 8 条
[1]  
HENNION B, 1985, P ISCAS JUN, P1065
[2]  
LIU S, 1981, UNIFIED MOSFET CAD M
[3]   SIMPAR - A VERSATILE TECHNOLOGY INDEPENDENT PARAMETER EXTRACTION PROGRAM USING A NEW OPTIMIZED FIT-STRATEGY [J].
MAES, W ;
DEMEYER, KM ;
DUPAS, LH .
IEEE TRANSACTIONS ON COMPUTER-AIDED DESIGN OF INTEGRATED CIRCUITS AND SYSTEMS, 1986, 5 (02) :320-325
[4]   ACCURATE LARGE-SIGNAL MOS TRANSISTOR MODEL FOR USE IN COMPUTER-AIDED DESIGN [J].
MERCKEL, G ;
BOREL, J ;
CUPCEA, NZ .
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1972, ED19 (05) :681-+
[5]   UNIFIED FIELD-EFFECT TRANSISTOR-THEORY INCLUDING VELOCITY SATURATION [J].
MURPHY, BT .
IEEE JOURNAL OF SOLID-STATE CIRCUITS, 1980, 15 (03) :325-328
[6]   ELECTRON-MOBILITY IN INVERSION AND ACCUMULATION LAYERS ON THERMALLY OXIDIZED SILICON SURFACES [J].
SUN, SC ;
PLUMMER, JD .
IEEE JOURNAL OF SOLID-STATE CIRCUITS, 1980, 15 (04) :562-573
[7]  
SZE SM, PHYSICS SEMICONDUCTO
[8]   PHYSICAL AND CAD MODELS FOR THE IMPLANTED-CHANNEL VLSI MOSFET [J].
WRIGHT, GT .
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1987, 34 (04) :823-833
1