A REVISED ANALYSIS OF DRY OXIDATION OF SILICON

被引：74

作者：

FARGEIX, A

GHIBAUDO, G

KAMARINOS, G

机构：

来源：

JOURNAL OF APPLIED PHYSICS | 1983年 / 54卷 / 05期

关键词：

D O I：

10.1063/1.332286

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

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页码：2878 / 2880

页数：3

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