FREQUENCY RESPONSE OF AVALANCHING PHOTODIODES

被引：54

作者：

EMMONS, RB

LUCOVSKY, G

机构：

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 1966年 / ED13卷 / 03期

关键词：

D O I：

10.1109/T-ED.1966.15685

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：297 / +

页数：1

共 17 条

[1]

ANDERSON LK, 1965, J APPL PHYS LETT, V6, P62

[2] INTERNAL FIELD EMISSION IN SILICON P-N JUNCTIONS [J].

CHYNOWETH, AG ;

MCKAY, KG .

PHYSICAL REVIEW, 1957, 106 (03) :418-426

[3] AVALANCHE EFFECTS IN SILICON P-N JUNCTIONS .2. STRUCTURALLY PERFECT JUNCTIONS [J].

GOETZBERGER, A ;

SCARLETT, RM ;

HAITZ, RH ;

MCDONALD, B .

JOURNAL OF APPLIED PHYSICS, 1963, 34 (06) :1591-+

[4] HIGH-SPEED PHOTODIODE SIGNAL ENHANCEMENT AT AVALANCHE BREAKDOWN VOLTAGE [J].

JOHNSON, KM .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1965, ED12 (02) :55-+

[5]

JOHNSON KM, 1964, INT SOL STAT CIRC C, P64

[6] IONIZATION RATES OF HOLES + ELECTRONS IN SILICON [J].

LEE, CA ;

KLEIMACK, JJ ;

BATDORF, RL ;

WIEGMANN, W ;

LOGAN, RA .

PHYSICAL REVIEW, 1964, 134 (3A) :A761-+

[7]

LEE CA, 1964 SOL DEV RES C

[8] 1-CARRIER SPACE-CHARGE-LIMITED CURRENT IN SOLIDS [J].

LINDMAYER, J ;

REYNOLDS, J ;

WRIGLEY, C .

JOURNAL OF APPLIED PHYSICS, 1963, 34 (04) :809-&

[9] AVALANCHE MULTIPLICATION IN INAS PHOTODIODES [J].

LUCOVSKY, G ;

EMMONS, RB .

PROCEEDINGS OF THE INSTITUTE OF ELECTRICAL AND ELECTRONICS ENGINEERS, 1965, 53 (02) :180-&

[10]

LUCOVSKY G, 1965, ISSCC DIGEST TECH PA, P52

← 1 2 →