DYNAMIC BEHAVIOR OF SEMICONDUCTOR LASERS

被引：115

作者：

BOERS, PM

VLAARDINGERBROEK, MT

机构：

[1] PHILIPS RES LABS,EINDHOVEN,NETHERLANDS

[2] TECH UNIV DENMARK,ELECTROMAGNETICS INST,LYNGBY,DENMARK

来源：

ELECTRONICS LETTERS | 1975年 / 11卷 / 10期

关键词：

D O I：

10.1049/el:19750157

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：206 / 208

页数：3

共 10 条

[1]

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[2]

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[3]

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[4] CW DEGRADATION AT 300 DEGREES K OF GAAS DOUBLE-HETEROSTRUCTURE JUNCTION LASERS .2. ELECTRONIC GAIN [J].

HAKKI, BW ;

PAOLI, TL .

JOURNAL OF APPLIED PHYSICS, 1973, 44 (09) :4113-4119

[5] LARGE-SIGNAL DIRECT MODULATION OF INJECTION LASERS [J].

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ELECTRONICS LETTERS, 1973, 9 (22) :532-533

[6]

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[7] NEW METHOD FOR REDUCING PATTERN EFFECT IN PCM CURRENT MODULATION OF DH-GAALAS LASERS [J].

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ITO, T .

IEEE JOURNAL OF QUANTUM ELECTRONICS, 1973, QE 9 (11) :1098-1101

[8] DIRECT MODULATION OF SEMICONDUCTOR LASERS [J].

PAOLI, TL ;

RIPPER, JE .

PROCEEDINGS OF THE INSTITUTE OF ELECTRICAL AND ELECTRONICS ENGINEERS, 1970, 58 (10) :1457-+

[9]

ROSS D, 1966, LASER LICHTVERSTRKER

[10] RATE EQUATION APPROACH FOR DIODE LASERS .1. STEADY-STATE SOLUTIONS FOR A SINGLE DIODE [J].

SALATHE, R ;

VOUMARD, C ;

WEBER, H .

OPTO-ELECTRONICS, 1974, 6 (06) :451-456

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