MILLIMETER FREQUENCY CONVERSION USING AU-N-TYPE GAAS SCHOTTKY BARRIER EPITAXIAL DIODES WITH A NOVEL CONTACTING TECHNIQUE

被引：61

作者：

YOUNG, DT

IRVIN, JC

机构：

来源：

PROCEEDINGS OF THE INSTITUTE OF ELECTRICAL AND ELECTRONICS ENGINEERS | 1965年 / 53卷 / 12期

关键词：

D O I：

10.1109/PROC.1965.4511

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：2130 / &

共 8 条

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[2]

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[3]

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[4] AU-N-TYPE GAAS SCHOTTKY BARRIER + ITS VARACTOR APPLICATION [J].

KAHNG, D .

BELL SYSTEM TECHNICAL JOURNAL, 1964, 43 (1P1) :215-+

[5] HIGH-FREQUENCY GALLIUM ARSENIDE POINT-CONTACT RECTIFIERS [J].

SHARPLESS, WM .

BELL SYSTEM TECHNICAL JOURNAL, 1959, 38 (01) :259-269

[6]

SHARPLESS WM, 1954, IRE T MICROWAVE THEO, VMTT2, P45

[7]

SHARPLESS WM, 1961, IRE T MICROWAVE THEO, VMTT9, P6

[8]

SOUTHWORTH GC, 1950, PRINCIPLES APPLICATI, P636