HIGH-ASPECT-RATIO DRY-ETCHING FOR MICROCHANNEL PLATES

被引：9

作者：

SNIDER, GL

THEN, AM

SEAVE, RJ

TASKER, GW

机构：

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 1994年 / 12卷 / 06期

关键词：

D O I：

10.1116/1.587621

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：3327 / 3331

页数：5

共 19 条

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