SUBLIMATION AND PHASE-TRANSITIONS ON SINGULAR AND VICINAL SI(111) SURFACES

被引：4

作者：

JUNG, TM ^{[1
]}

PHANEUF, RJ ^{[1
]}

WILLIAMS, ED ^{[1
]}

机构：

[1] UNIV MARYLAND,DEPT PHYS,COLL PK,MD 20742

来源：

SURFACE SCIENCE | 1994年 / 301卷 / 1-3期

关键词：

D O I：

10.1016/0039-6028(94)91294-7

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

Silicon has a small but finite sublimation rate near the reconstructive transition temperature of the Si(111) surface. We have used low-energy electron diffraction to investigate the effect of this sublimation rate on the reconstructive transition, and on the faceting transition that takes place on vicinal surfaces. Balancing the sublimation rate with an equal or slightly larger opposing incident flux has no measurable effect on either transition. The transitions are thus equilibrium, not kinetic phenomena, and the rate of surface diffusion at this temperature must be sufficient to equilibrate structural changes due to sublimation.

引用

页码：129 / 135

页数：7

共 27 条

[1] THE MEANDERING OF STEPS AND THE TERRACE WIDTH DISTRIBUTION ON CLEAN SI(111) - AN INSITU EXPERIMENT USING REFLECTION ELECTRON-MICROSCOPY [J].