TEMPERATURE-DEPENDENCE OF THE THRESHOLD CURRENT-DENSITY OF AN INJECTION HETEROLASER

被引：0
|
作者：
GELMONT, BL
ZEGRYA, GG
机构：
来源：
SOVIET PHYSICS SEMICONDUCTORS-USSR | 1991年 / 25卷 / 11期
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中图分类号：
O469 [凝聚态物理学];
学科分类号：
070205 ;
摘要：
An analytic dependence of the density of the injection current on the temperature of a semiconductor laser is determined near the lasing threshold. The ratio of the electron quasi-Fermi level F(c) to the temperature T at the inversion threshold, and at the lasing threshold is shown to be constant. This constant is governed solely by the properties of the semiconductor.
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页码：1216 / 1218
页数：3
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