TEMPERATURE-DEPENDENCE OF THE THRESHOLD CURRENT-DENSITY OF AN INJECTION HETEROLASER

被引：0

作者：

GELMONT, BL

ZEGRYA, GG

机构：

来源：

SOVIET PHYSICS SEMICONDUCTORS-USSR | 1991年 / 25卷 / 11期

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D O I：

暂无

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

An analytic dependence of the density of the injection current on the temperature of a semiconductor laser is determined near the lasing threshold. The ratio of the electron quasi-Fermi level F(c) to the temperature T at the inversion threshold, and at the lasing threshold is shown to be constant. This constant is governed solely by the properties of the semiconductor.

引用

页码：1216 / 1218

页数：3

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