ANALYSIS OF THE CORRELATIVE CHARACTERISTICS BETWEEN ADJACENT PIXELS OF AMPLIFIED METAL-OXIDE-SEMICONDUCTOR IMAGER BY A NEW-TYPE LEAST-SQUARES METHOD

The magnitude and distribution of spurious response of the pattern of a circular zone plate of the amplified metal oxide semiconductor (MOS) imager are different from those for charge-coupled devices (CCD). When using the trial-and-error or the least squares method, these features could not be explained by any special shape of the sensing aperture or the sensing distribution, but were explained only by the correlation of accumulated charges between adjacent pixels. This correlation causes less spurious resolution and improves the characteristics of the S/N. (1) The shape of the aperture can be shown by a Gaussian distribution in which the standard deviations in the horizontal and vertical directions are 0.266, and 0.231, respectively. (2) The correlative coefficients in the longitudinal, lateral and diagonal directions each stood at 0.0175. The reliability factor R is 0.6%. (3) The measured signal leakage in adjacent pixels by the microoptical spot is 0.02, which fits the calculated value well. (4) The calculated coefficient of noise reduction is 0.65, which agrees with the obtained value of 0.621.