THE GETTERING EFFECTS OF GA-IN-AL TERNARY MELT BUBBLER ON GROWTH-RATE AND SOLID COMPOSITION OF MOCVD ALGAAS

被引:14
作者
KIM, MS [1 ]
MIN, S [1 ]
CHUN, JS [1 ]
机构
[1] KOREA ADV INST SCI & TECHNOL,DEPT MAT SCI & ENGN,SEOUL 131,SOUTH KOREA
关键词
D O I
10.1016/0022-0248(86)90244-7
中图分类号
O7 [晶体学];
学科分类号
0702 ; 070205 ; 0703 ; 080501 ;
摘要
引用
收藏
页码:21 / 26
页数:6
相关论文
共 40 条
[1]   CHARACTERIZATION OF ORGANO-METALLIC VPE GROWN GAAS AND AIGAAS FOR SOLAR-CELL APPLICATIONS [J].
AEBI, V ;
COOPER, CB ;
MOON, RL ;
SAXENA, RR .
JOURNAL OF CRYSTAL GROWTH, 1981, 55 (03) :517-525
[2]  
ANDRE JP, 1983, I PHYS C SER, V65, P117
[3]   SILICON AND BERYLLIUM DOPING OF OMVPE GROWN AL0-0.3GAL-0-0.3 USING SILANE AND DIETHYLBERYLLIUM [J].
BOTTKA, N ;
SILLMON, RS ;
TSENG, WF .
JOURNAL OF CRYSTAL GROWTH, 1984, 68 (01) :54-59
[4]   THE GROWTH AND CHARACTERIZATION OF METALORGANIC CHEMICAL VAPOR-DEPOSITION (MO-CVD) QUANTUM WELL TRANSPORT STRUCTURES [J].
COLEMAN, JJ ;
DAPKUS, PD ;
THOMPSON, DE ;
CLARKE, DR .
JOURNAL OF CRYSTAL GROWTH, 1981, 55 (01) :207-212
[5]   HIGH-PURITY GAAS PREPARED FROM TRIMETHYLGALLIUM AND ARSINE [J].
DAPKUS, PD ;
MANASEVIT, HM ;
HESS, KL ;
LOW, TS ;
STILLMAN, GE .
JOURNAL OF CRYSTAL GROWTH, 1981, 55 (01) :10-23
[6]   The polymerization of some derivatives of trimethylaluminum [J].
Davidson, N ;
Brown, HC .
JOURNAL OF THE AMERICAN CHEMICAL SOCIETY, 1942, 64 :316-324
[7]  
HAG JN, 1971, J ORGANOMETALLIC CHE, V28, P193
[8]   A NEW APPROACH TO THE GETTERING OF OXYGEN DURING THE GROWTH OF GAALAS BY LOW-PRESSURE MOCVD [J].
HERSEE, SD ;
DIFORTEPOISSON, MA ;
BALDY, M ;
DUCHEMIN, JP .
JOURNAL OF CRYSTAL GROWTH, 1981, 55 (01) :53-57
[9]  
KASEMET D, 1983, I PHYS C SER, V65, P79
[10]   OXYGEN GETTERING BY GRAPHITE BAFFLES DURING ORGANO-METALLIC VAPOR-PHASE EPITAXIAL ALGAAS GROWTH [J].
KISKER, DW ;
MILLER, JN ;
STRINGFELLOW, GB .
APPLIED PHYSICS LETTERS, 1982, 40 (07) :614-616