THERMAL EVOLUTION OF MOLYBDENUM DISILICIDE GROWN ON (100) SILICON UNDER ULTRAHIGH-VACUUM CONDITIONS

被引：18

作者：

PERIO, A

TORRES, J

机构：

来源：

关键词：

D O I：

10.1063/1.337048

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：2760 / 2764

页数：5

共 9 条

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[6] NICOLET MA, 1983, VLSI ELECTRONICS MIC, V6
[7] GROWTH OF MOSI2 WITH PREFERENTIAL ORIENTATION ON (100) SILICON
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[9] REACTION OF MO THIN-FILMS ON SI (100) SURFACES
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