SEGREGATION OF SILICON IN GALLIUM PHOSPHIDE

被引：17
作者：
RUBENSTEIN, M
机构：
来源：
JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 1965年 / 112卷 / 10期
关键词：
D O I：
10.1149/1.2423332
中图分类号：
O646 [电化学、电解、磁化学];
学科分类号：
081704 ;
摘要：
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页码：1010 / +
页数：1
相关论文
共 7 条
[1]   INFRA-RED ABSORPTION IN GALLIUM PHOSPHIDE-GALLIUM ARSENIDE ALLOYS .1. ABSORPTION IN N-TYPE MATERIAL [J].
ALLEN, JW ;
HODBY, JW .
PROCEEDINGS OF THE PHYSICAL SOCIETY OF LONDON, 1963, 82 (526) :315-&
[2]   VAPOR PRESSURE OF GALLIUM, STABILITY OF GALLIUM SUBOXIDE VAPOR, AND EQUILIBRIA OF SOME REACTIONS PRODUCING GALLIUM SUBOXIDE VAPOR [J].
COCHRAN, CN ;
FOSTER, LM .
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1962, 109 (02) :144-148
[3]   ZUR FRAGE DES DAMPFDRUCKS DER VERBINDUNGEN INAS, GAAS, INP UND GAP [J].
FOLBERTH, OG .
JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1958, 7 (04) :295-&
[4]  
FROSCH CJ, 1960, MAY CHIC M SOC
[5]   PRINCIPLES OF ZONE-MELTING [J].
PFANN, WG .
JOURNAL OF METALS, 1952, 4 (07) :747-753
[6]   OPTICAL ABSORPTION IN N-TYPE GALLIUM PHOSPHIDE [J].
SPITZER, WG ;
GERSHENZON, M ;
FROSCH, CJ ;
GIBBS, DF .
JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1959, 11 (3-4) :339-341
[7]  
ZALLEN R, 1964, PHYS REV, V134, P1628
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