Studies of deep levels in n-GaAs by SADLTS

被引：1

作者：

Sato, K

Tanaka, K

Yoshino, J

Okamoto, Y

Morimoto, J

Miyakawa, T

机构：

来源：

ICDS-18 - PROCEEDINGS OF THE 18TH INTERNATIONAL CONFERENCE ON DEFECTS IN SEMICONDUCTORS, PTS 1-4 | 1995年 / 196-卷

关键词：

GaAs; EL2; EL3; DLTS; SADLTS; emission rate spectrum;

D O I：

10.4028/www.scientific.net/MSF.196-201.267

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The characteristics of the deep levels in n-GaAs single crystals, which were grown by liquid-encapsulated-Czockralski (LEG) and horizontal-Bridgman (HE) method, were studied by using Spectral Analysis of Deep Level Transient Spectroscopy (SADLTS). Two trap levels called EL2 and EL3 were clearly observed where the activation energy and the capture cross section for EL2 and EL3 were evaluated as 0.78 eV, 0.59 eV, 7.8X10(-14) cm(2) and 5.8X10(13) cm(2), respectively, in the LEC sample. According to the analysis of the emission rate spectrum, one found that the EL2 had broadenings of 6 % and 25 % in the activation energy and the capture cross section, respectively, though the EL3 was a discrete level without broadenings in the deep levels parameters.

引用

页码：267 / 271

页数：5

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