EXTRACTION TECHNIQUES FOR FET SWITCH MODELING

被引：6

作者：

EHOUD, A ^{[1
]}

DUNLEAVY, LP ^{[1
]}

LAZAR, SC ^{[1
]}

BRANSON, RE ^{[1
]}

机构：

[1] TEXAS INSTRUMENTS INC, DALLAS, TX 75265 USA

来源：

IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES | 1995年 / 43卷 / 08期

关键词：

D O I：

10.1109/22.402273

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A new simple method for extracting equivalent circuit parameters for series and shunt GaAs FET switches is presented, The circuit elements are extracted from one set of S-parameter measurements for each switch state, acid scale linearly with gate width, Extracted Equivalent Circuit Parameters (ECP's) are insensitive to frequency across the measured bandwidth. Good agreement has been obtained between simulated and model results for a 0.5 mu m gate length series and shunt GaAs FET switches of varying gate widths, across the 0.45-26.5 GHz band.

引用

页码：1863 / 1868

页数：6

共 12 条

[1]

ARNOLD E, 1990 IEEE MTT S, P359

[2]

AYASLI Y, 1982, MICROWAVE J, V25, P61

[3] BROAD-BAND DETERMINATION OF THE FET SMALL-SIGNAL EQUIVALENT-CIRCUIT [J].