共 23 条
[1]
AIYAMA T, 1979, J NONCRYST SOLIDS, V33, P31
[2]
ELECTRICAL AND OPTICAL-PROPERTIES OF AMORPHOUS SILICON-CARBIDE, SILICON-NITRIDE AND GERMANIUM CARBIDE PREPARED BY GLOW-DISCHARGE TECHNIQUE
[J].
PHILOSOPHICAL MAGAZINE,
1977, 35 (01)
:1-16
[3]
ANDERSON DA, 1976, PHILOS MAG, V35, P935
[4]
NONSTOICHIOMETRIC GERMANIUM NITRIDE - A NEW INSULATING MATERIAL FOR MIS MICROELECTRONICS .1. THE CHOICE OF THE INSULATOR AND DEPOSITION
[J].
PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE,
1983, 78 (01)
:115-123
[5]
NONSTOICHIOMETRIC GERMANIUM NITRIDE - A NEW INSULATING MATERIAL FOR MIS MICROELECTRONICS .2. COMPOSITION, PROPERTIES, AND THE INTERFACE WITH A SEMICONDUCTOR
[J].
PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE,
1983, 78 (02)
:391-400
[6]
MIS STRUCTURE GAAS-GE3N4AL
[J].
PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE,
1976, 36 (01)
:73-79
[7]
Barna A., 1972, J NONCRYSTALL SOLIDS, V8-10, P36, DOI DOI 10.1016/0022-3093(72)90114-7
[9]
USE OF HYDROGENATION IN STRUCTURAL AND ELECTRONIC STUDIES OF GAP STATES IN AMORPHOUS-GERMANIUM
[J].
PHYSICAL REVIEW B,
1976, 13 (02)
:787-804