REDUCTION OF SURFACE-DEFECTS IN GAAS GROWN BY MOLECULAR-BEAM EPITAXY

被引：22
作者：
SALOKATVE, A
VARRIO, J
LAMMASNIEMI, J
ASONEN, H
PESSA, M
机构：
来源：
APPLIED PHYSICS LETTERS | 1987年 / 51卷 / 17期
关键词：
D O I：
10.1063/1.98672
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
引用
收藏
页码：1340 / 1342
页数：3
相关论文
共 20 条
[1]   ORIGIN OF OVAL DEFECTS IN GAAS-LAYERS GROWN BY MOLECULAR-BEAM EPITAXY [J].
AKIMOTO, K ;
DOHSEN, M ;
ARAI, M ;
WATANABE, N .
JOURNAL OF CRYSTAL GROWTH, 1985, 73 (01) :117-122
[2]   MICROTWINNING AND GROWTH DEFECTS IN GAAS MBE LAYERS [J].
BAFLEUR, M ;
MUNOZYAGUE, A ;
ROCHER, A .
JOURNAL OF CRYSTAL GROWTH, 1982, 59 (03) :531-538
[3]   SOURCE AND ELIMINATION OF OVAL DEFECTS ON GAAS FILMS GROWN BY MOLECULAR-BEAM EPITAXY [J].
CHAI, YG ;
CHOW, R .
APPLIED PHYSICS LETTERS, 1981, 38 (10) :796-798
[4]   GAAS SUBSTRATE PREPARATION FOR OVAL-DEFECT ELIMINATION DURING MBE GROWTH [J].
FRONIUS, H ;
FISCHER, A ;
PLOOG, K .
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1986, 25 (02) :L137-L138
[5]   CLASSIFICATION AND ORIGINS OF GAAS OVAL DEFECTS GROWN BY MOLECULAR-BEAM EPITAXY [J].
FUJIWARA, K ;
KANAMOTO, K ;
OHTA, YN ;
TOKUDA, Y ;
NAKAYAMA, T .
JOURNAL OF CRYSTAL GROWTH, 1987, 80 (01) :104-112
[6]   LOW-TEMPERATURE GROWTH OF GAAS AND ALAS-GAAS QUANTUM-WELL LAYERS BY MODIFIED MOLECULAR-BEAM EPITAXY [J].
HORIKOSHI, Y ;
KAWASHIMA, M ;
YAMAGUCHI, H .
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 1986, 25 (10) :L868-L870
[7]   INITIAL RESULTS OF A HIGH THROUGHPUT MBE SYSTEM FOR DEVICE FABRICATION [J].
HWANG, JCM ;
BRENNAN, TM ;
CHO, AY .
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1983, 130 (02) :493-496
[8]   SURFACE-MORPHOLOGY OF GAAS GROWN BY GAS-SOURCE MBE USING TRIMETHYLGALLIUM AND ARSENIC [J].
ISHIKAWA, H ;
KONDO, K ;
SASA, S ;
TANAKA, H ;
HIYAMIZU, S .
JOURNAL OF CRYSTAL GROWTH, 1986, 76 (02) :521-524
[9]   MORPHOLOGICAL-STUDIES OF OVAL DEFECTS IN GAAS EPITAXIAL LAYERS GROWN BY MOLECULAR-BEAM EPITAXY [J].
MATTESON, S ;
SHIH, HD .
APPLIED PHYSICS LETTERS, 1986, 48 (01) :47-49
[10]   AN INVESTIGATION OF GAAS FILMS GROWN BY MBE AT LOW SUBSTRATE TEMPERATURES AND GROWTH-RATES [J].
METZE, GM ;
CALAWA, AR ;
MAVROIDES, JG .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1983, 1 (02) :166-169
12