DIFFERENCE BETWEEN DEPOSITION-INDUCED AND LIGHT-INDUCED DEFECTS IN A-SI-H STUDIED BY LIGHT-INDUCED ANNEALING EXPERIMENTS

被引：2

作者：

HATA, N

MATSUDA, A

机构：

[1] Electrotechnical Laboratory, Tsukuba-shi, Ibaraki, 305

来源：

JOURNAL OF NON-CRYSTALLINE SOLIDS | 1993年 / 164卷

关键词：

D O I：

10.1016/0022-3093(93)90522-Y

中图分类号：

TQ174 [陶瓷工业]; TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

The first experimental rzesults on light-induced annealing (LIA) of deposition-induced defects (DID) in hydrogenated amorphous silicon (a-Si:H) are reported. LIA of DID and of light-induced defects (LID) showed quite different behavior: the density of DID reduced by LIA amounted to less than one third of LID reduced by LIA, while thermal annealing reduced DID and LID very similarly. These results indicate a structural difference between the vicinities of DID and LID, and are discussed in connection with a structural model of a-Si:H.

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页码：187 / 190

页数：4

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