DISSIPATIVE QUANTUM TUNNELING OF DEFECTS IN A MESOSCOPIC METAL

被引:5
作者
BIRGE, NO [1 ]
CHUN, K [1 ]
ALERS, GB [1 ]
GOLDING, B [1 ]
机构
[1] MICHIGAN STATE UNIV,CTR FUNDAMENTAL MAT RES,E LANSING,MI 48824
来源
PHYSICA B | 1994年 / 194卷
关键词
D O I
10.1016/0921-4526(94)90820-6
中图分类号
O469 [凝聚态物理学];
学科分类号
070205 ;
摘要
We have studied the dynamics of single bistable defects in sub-micron Bi wires at temperatures 0.1 - 2 K. The defect motions can cause large changes in the sample resistance via universal conductance fluctuations. The dynamics are due to the defect particle, coupled to the electron bath, tunneling in a double-well potential with asymmetry epsilon. We clearly observe tunneling rates that increase as the temperature is lowered when kT >> epsilon, as predicted by the theory of dissipative quantum tunneling. Fits of the theory to the data yield a value of the defect-electron bath coupling constant alpha, that is defect-specific.
引用
收藏
页码:981 / 982
页数:2
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