BEHAVIOR OF INTERSTITIAL IMPURITIES ON THE SURFACE OF YTTRIUM DURING SOLID-STATE ELECTROTRANSPORT - AUGER STUDIES

被引：5

作者：

IONOV, AM ^{[1
]}

VOLKOV, VT ^{[1
]}

NIKIFOROVA, TV ^{[1
]}

机构：

[1] RUSSIAN ACAD SCI,INST MICROELECTR TECHNOL & HIGH PUR MAT,CHERNOGOLOVKA 142432,RUSSIA

来源：

JOURNAL OF ALLOYS AND COMPOUNDS | 1995年 / 223卷 / 01期

关键词：

INTERSTITIAL IMPURITIES; YTTRIUM; SOLID STATE ELECTROTRANSPORT; AUGER STUDIES;

D O I：

10.1016/0925-8388(94)01454-X

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

Investigations of electromigration of interstitial impurities O, C and N on the yttrium surface during solid state electrotransport in ultrahigh vacuum have been carried out by the method of Auger electron spectroscopy. It was shown that the behaviour of impurities on a surface correlated with that in the bulk during the electrotransport and a considerable segregation of O and C was taking place on the surface at reduced temperature. The analysis of possible mechanisms of the segregation has revealed non-equilibrium segregation as the most probable reason for the segregation. The parameters determining the segregation have been estimated.

引用

页码：91 / 96

页数：6

共 11 条

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