AUGER LIFETIME IN INAS, INASSB, AND INASSB-INALASSB QUANTUM-WELLS

被引：55

作者：

LINDLE, JR ^{[1
]}

MEYER, JR ^{[1
]}

HOFFMAN, CA ^{[1
]}

BARTOLI, FJ ^{[1
]}

TURNER, GW ^{[1
]}

CHOI, HK ^{[1
]}

机构：

[1] MIT,LINCOLN LAB,LEXINGTON,MA 02173

来源：

APPLIED PHYSICS LETTERS | 1995年 / 67卷 / 21期

关键词：

D O I：

10.1063/1.115146

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The intensity-dependent photoconductive response to 2.06 mu m excitation has been used to determine Shockley-Read and Auger lifetimes for InAs, InAs0.91Sb0.09, and an InAs0.85 Sb-0.15-InAlAsSb multiple quantum well. The Auger rate at 77 K correlates with the proximity to resonance between the energy gap and the split-off gap. Thus the Auger coefficient in the alloy decreases with decreasing temperature, whereas that in the quantum well increases by nearly a factor of 5 between 300 and 77 K. (C) 1995 American Institute of Physics.

引用

页码：3153 / 3155

页数：3

共 23 条

[1]

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[2]

ANDRUSHKO AI, 1986, SOV PHYS SEMICOND+, V20, P255

[3] 3.9-MU-M INASSB/ALASSB DOUBLE-HETEROSTRUCTURE DIODE-LASERS WITH HIGH-OUTPUT POWER AND IMPROVED TEMPERATURE CHARACTERISTICS [J].