TRANSMISSION ELECTRON-MICROSCOPY SPECIMEN PREPARATION TECHNIQUE USING FOCUSED ION-BEAM FABRICATION - APPLICATION TO GAAS METAL-SEMICONDUCTOR FIELD-EFFECT TRANSISTORS

被引：40
|
作者：
YAMAGUCHI, A
SHIBATA, M
HASHINAGA, T
机构：
[1] SUMITOMO ELECT IND LTD,CTR ANALYT CHARACTERIZAT,KONOHANA KU,OSAKA 554,JAPAN
[2] SUMITOMO ELECT IND LTD,DEPT GAAS IC DEV,SAKAE KU,YOKOHAMA 244,JAPAN
来源：
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 1993年 / 11卷 / 06期
关键词：
D O I：
10.1116/1.586536
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
A specimen preparation technique using a focused ion beam to generate cross-sectional transmission electron microscopy (TEM) samples of GaAs integrated circuits (ICs) was studied. Using a two axes tilting technique it was possible to prepare sample with minimal thickness (approximately 10 nm) to enhance spatial resolution in TEM and x-ray spectrometer analysis. This method was applied for failure analysis of degraded GaAs ICs. The interfacial microstructure between the gate metallization and the GaAs substrate, caused by high temperature operation, was also investigated
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页码：2016 / 2020
页数：5
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