HIGH-QUALITY EPITAXIAL INDIUM-PHOSPHIDE AND INDIUM ALLOYS GROWN USING TRIMETHYLINDIUM AND PHOSPHINE IN AN ATMOSPHERIC-PRESSURE REACTOR

被引：29
作者：
BASS, SJ
YOUNG, ML
机构：
来源：
JOURNAL OF CRYSTAL GROWTH | 1984年 / 68卷 / 01期
关键词：
D O I：
10.1016/0022-0248(84)90431-7
中图分类号：
O7 [晶体学];
学科分类号：
0702 ; 070205 ; 0703 ; 080501 ;
摘要：
引用
收藏
页码：311 / 318
页数：8
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