LOW-ENERGY-ELECTRON DIFFRACTION STUDY OF THE GROWTH OF ULTRATHIN FILMS OF FACE-CENTERED-CUBIC CO ON RH(001)

被引:6
作者
BEGLEY, AM [1 ]
KIM, SK [1 ]
JONA, F [1 ]
MARCUS, PM [1 ]
机构
[1] IBM CORP, THOMAS J WATSON RES CTR, YORKTOWN HTS, NY 10598 USA
关键词
D O I
10.1088/0953-8984/5/40/006
中图分类号
O469 [凝聚态物理学];
学科分类号
070205 ;
摘要
The epitaxial growth of Co on Rh{001} at room temperature is studied by means of quantitative low-energy electron diffraction and Auger electron spectroscopy. The Co films are found to grow pseudomorphic to the substrate in the layer-by-layer mode for at least two layers. The interlayer spacing between the monolayer and the substrate is 1.77 +/- 0.03 angstrom. The first and second interlayer spacings for a bilayer film are 1.60 +/- 0.04 and 1.75 +/- 0.04 angstrom, respectively. Strained pseudomorphic films of up to 10 layers could be grown with a bulk lattice spacing of 1.60 +/- 0.03 k and a 3.1%-expanded first interlayer spacing (1.65 +/- 0.03 angstrom). An elastic strain analysis shows that the equilibrium (unstrained) phase of these Co films is face-centred cubic: the bulk interlayer spacing is contracted by 9.7% with respect to the equilibrium value (1.772 angstrom) as a consequence of the large positive planar epitaxial strain produced by the 7.3% lattice mismatch between FCC Co and Rh.
引用
收藏
页码:7307 / 7318
页数:12
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