LOCATION OF ENERGY-LEVELS OF OXYGEN-VACANCY COMPLEX IN GAAS

被引：57

作者：

SKOWRONSKI, M ^{[1
]}

NEILD, ST ^{[1
]}

KREMER, RE ^{[1
]}

机构：

[1] CRYSTAL SPECIALTIES INC,COLORADO SPRINGS,CO 80906

来源：

APPLIED PHYSICS LETTERS | 1990年 / 57卷 / 09期

关键词：

D O I：

10.1063/1.103399

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Experimental results of photoexcitation and thermal deactivation of localized vibrational mode absorption of the oxygen-vacancy complex in GaAs are reported. Two levels within the energy gap are observed, one located at 0.14 eV and the other between 0.57 eV and 0.75 eV below the conduction-band minimum. It is proposed that this center exhibits a negative U property with the second electron ionization energy higher than that of the first electron.

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页码：902 / 904

页数：3

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