ELECTRICAL-CONDUCTIVITY IN NON-STOICHIOMETRIC TITANIUM-DIOXIDE AT ELEVATED-TEMPERATURES

被引:112
作者
BALACHANDRAN, U
EROR, NG
机构
[1] Oregon Graduate Cent, United States
关键词
Semiconductor Materials--Defects;
D O I
10.1007/BF00547436
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
The electrical conductivity of polycrystalline titanium dioxide prepared by a liquid mix technique was measured for the oxygen partial pressure range of 100 to 10-19 atm and temperature range of 850 to 1050°C. The data were found to be proportional to the -1/6 power of oxygen partial pressure for the oxygen pressure range 10-19 to 10-15 atm, and proportional to PO(2)-1/4 for the oxygen pressure range >10-15 atm. The region of linearity where the electrical conductivity varied as the -1/4 power of PO(2) increased as the temperature was decreased. There was evidence of p-type behavior for PO(2)>10-2 atm in the temperature range 950 to 850°C. Electrical conductivity minima in the logσ against log PO(2) plot moved to lower PO(2) as the temperature was decreased in the range 950 to 850°C. The measured oxygen pressure dependence of electrical conductivity in the lowest PO(2) region supports the oxygen vacancy defect model. The observed data are consistent with the presence of small amounts of acceptor impurities. A binding energy of 0.67 eV between the acceptor impurity and its compensating oxygen vacancy was also determined.
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页码:2676 / 2682
页数:7
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