ELECTRONIC-STRUCTURE OF TRANSITION-ATOM IMPURITIES IN SEMICONDUCTORS - SUBSTITUTIONAL 3D IMPURITIES IN SILICON

被引：93
作者：
ZUNGER, A
LINDEFELT, U
机构：
[1] UNIV COLORADO,DEPT PHYS,BOULDER,CO 80309
[2] UNIV LUND,DEPT THEORET PHYS,S-22362 LUND,SWEDEN
来源：
PHYSICAL REVIEW B | 1983年 / 27卷 / 02期
关键词：
D O I：
10.1103/PhysRevB.27.1191
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
引用
收藏
页码：1191 / 1227
页数：37
相关论文
共 89 条
[1]  
ABDUGAFUROVA MA, 1975, SOV PHYS SEMICOND, V9, P685
[2]  
AKHMEDOVA MM, 1975, SOV PHYS SEMICOND+, V9, P1516
[3]   UNIFIED THEORY OF POINT-DEFECT ELECTRONIC STATES, CORE EXCITONS, AND INTRINSIC ELECTRONIC STATES AT SEMICONDUCTOR SURFACES [J].
ALLEN, RE ;
DOW, JD .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1981, 19 (03) :383-387
[4]  
AZIMOV SA, 1974, SOV PHYS SEMICOND+, V7, P1227
[5]  
BAKHADYRKHANOV MK, 1976, SOV PHYS SEMICOND+, V10, P441
[6]   NEW SELF-CONSISTENT APPROACH TO THE ELECTRONIC-STRUCTURE OF LOCALIZED DEFECTS IN SOLIDS [J].
BARAFF, GA ;
SCHLUTER, M .
PHYSICAL REVIEW B, 1979, 19 (10) :4965-4979
[7]   ELECTRONIC IMPURITY LEVELS IN SEMICONDUCTORS [J].
BASSANI, F ;
IADONISI, G ;
PREZIOSI, B .
REPORTS ON PROGRESS IN PHYSICS, 1974, 37 (09) :1099-1210
[8]   PARAMAGNETIC RESONANCE OF A CU2+ ION IN A TETRAHEDRAL CRYSTAL FIELD [J].
BATES, CA ;
STANDLEY, KJ ;
STEVENS, KWH ;
MOORE, WS .
PROCEEDINGS OF THE PHYSICAL SOCIETY OF LONDON, 1962, 79 (507) :73-+
[9]   NEW APPROACH FOR SOLVING THE DENSITY-FUNCTIONAL SELF-CONSISTENT-FIELD PROBLEM [J].
BENDT, P ;
ZUNGER, A .
PHYSICAL REVIEW B, 1982, 26 (06) :3114-3137
[10]  
Bergh A., 1976, LIGHT EMITTING DIODE
123456789