共 50 条
- [1] SPUTTERING AND SECONDARY ION YIELDS OF TI-AL ALLOYS SUBJECTED TO OXYGEN ION-BOMBARDMENTSURFACE SCIENCE, 1984, 140 (02) : 491 - 498INOUE, KTAGA, Y
- [2] SPUTTERING AND SECONDARY ION EMISSION OF CU-AL ALLOYS SUBJECTED TO OXYGEN ION-BOMBARDMENTSURFACE SCIENCE, 1984, 147 (2-3) : 427 - 432INOUE, KTAGA, Y
- [3] SECONDARY ION EMISSION FROM SI SUBJECTED TO OXYGEN ION-BOMBARDMENTJAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1984, 23 (11): : 1466 - 1469OHWAKI, TTAGA, Y
- [4] VELOCITY DISTRIBUTIONS AND SPUTTERING YIELDS OF CHROMIUM ATOMS UNDER ARGON, OXYGEN AND CARBON ION-BOMBARDMENTJOURNAL OF NUCLEAR MATERIALS, 1984, 128 (DEC) : 577 - 582HUSINSKY, WBETZ, GGIRGIS, IVIEHBOCK, FBAY, HL
- [5] SPUTTERING OF ADSORBED LAYERS BY ION-BOMBARDMENTJOURNAL OF NUCLEAR MATERIALS, 1976, 63 (01) : 193 - 198TAGLAUER, EBEITAT, UMARIN, GHEILAND, W
- [6] SPUTTERING POLYMER-FILMS BY ION-BOMBARDMENTHIGH ENERGY CHEMISTRY, 1982, 16 (03) : 218 - 221FILATOV, VNSYSOEV, AAKOLOTYRKIN, VMTUZOV, LSSHCHUROV, AN
- [7] SPUTTERING OF IRON UNDER MOLECULAR ION-BOMBARDMENTJAPANESE JOURNAL OF APPLIED PHYSICS, 1977, 16 (09) : 1681 - 1682GHOSE, DBASU, DKARMOHAPATRO, SB
- [8] THE INFLUENCE OF BOMBARDMENT CONDITIONS UPON THE SPUTTERING AND SECONDARY ION YIELDS OF SILICONAPPLIED SURFACE SCIENCE, 1981, 7 (04) : 372 - 392MORGAN, AEDEGREFTE, HAMWARMOLTZ, NWERNER, HWTOLLE, HJ
- [9] CHARGE STATE FORMATION AND EXITATION OF DIMERS AT SPUTTERING UNDER ION-BOMBARDMENT OF METALSIZVESTIYA AKADEMII NAUK SSSR SERIYA FIZICHESKAYA, 1990, 54 (07): : 1313 - 1316BITENSKY, ISVOITSEKHOVSKY, IAPARILIS, ES