ELECTRICAL CHARACTERIZATION OF RAPIDLY ANNEALED NI AND PD/N-INP SCHOTTKY DIODES

被引：12

作者：

EFTEKHARI, G

机构：

[1] Dept. of Electr. Eng., State Univ. of New York, New Paltz, NY

来源：

SEMICONDUCTOR SCIENCE AND TECHNOLOGY | 1995年 / 10卷 / 08期

关键词：

D O I：

10.1088/0268-1242/10/8/020

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The effects of rapid thermal annealing on the electrical characteristics of Ni and Pd contacts on n-lnP are investigated. Results show that annealing at temperatures up to 450 degrees C and for durations up to 100 s has little effect on the electrical parameters of these contacts. Contacts annealed at 600 degrees C showed some degradation. Contacts annealed at 450 degrees C and 600 degrees C for 100 s showed an aging effect. Different reaction processes at the interface and formation of an InP surface layer with no stoichiometry are used to explain the observations.

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页码：1163 / 1166

页数：4

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