BEAN-LIVINGSTON BARRIERS AND FIRST FIELD FOR FLUX-PENETRATION IN HIGH-TC CRYSTALS

被引:64
作者
BURLACHKOV, L [1 ]
KONCZYKOWSKI, M
YESHURUN, Y
HOLTZBERG, F
机构
[1] BAR ILAN UNIV,DEPT PHYS,IL-52900 RAMAT GAN,ISRAEL
[2] IBM CORP,THOMAS J WATSON RES CTR,YORKTOWN HTS,NY 10598
关键词
D O I
10.1063/1.350152
中图分类号
O59 [应用物理学];
学科分类号
摘要
We present evidence for the importance of Bean-Livingston (BL) barries for field penetration into high-T(c) crystals. The magnetization curves M(H) and the first field H(p) for flux penetration were measured near the transition temperature T(c) of untwinned Y-Ba-Cu-O crystal by using a miniature Hall probe. There are three observations that serve as evidence for the efficiency of BL barriers: (1) the magnetization was found to be almost zero on the descending branch of the magnetization loop; (2) The slope of H(p)(T) exhibits a clear change close to T(c), being largest at T(c); (3) after introducing damage by irradiating the sample, both the field H(p) and the width of the M(H) loops reduce significantly, showing almost reversible behavior for the sample. We explain these observations in terms of BL barriers which are shown to be especially important in high-T(c) superconductors, and these could be responsible for the controversy of the H(c1) values reported previously in the literature.
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页码:5759 / 5761
页数:3
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