RESIDUAL SULFUR AND SILICON DOPING IN INP AND GAINAS

被引：3

作者：

GAUNEAU, M

CHAPLAIN, R

RUPERT, A

COQUILLE, R

TOUDIC, Y

GRANDPIERRE, G

机构：

来源：

JOURNAL OF CRYSTAL GROWTH | 1986年 / 76卷 / 01期

关键词：

D O I：

10.1016/0022-0248(86)90018-7

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

引用

页码：128 / 134

页数：7

共 9 条

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