MICROWAVE PLASMA GENERATION OF ARSINE FROM HYDROGEN AND SOLID ARSENIC

The generation of arsine from the reactions of hydrogen and elemental arsenic in a microwave plasma reactor is described. The arsenic is evaporated from a solid source upstream and carried into the microwave plasma region by a mixture of hydrogen and argon. Stable reaction products, arsine and diarsine are observed by molecular beam sampled mass spectroscopy along with partially hydrogenated species (e.g., AsH and AsH2). The effect of composition and flow rate of the argon/hydrogen carrier gas mixture on the amount of arsine generated is investigated. The arsine production reaches a maximum for an argon-to-hydrogen ratio of unity indicating that metastable argon species act as energy transfer intermediates in the overall reaction. The generation of arsine and diarsine from easily handled solid arsenic by this technique makes it attractive as a possible arsenic source for the growth of compound semiconductors by low-pressure metalorganic chemical vapor deposition.<lz> <lz> <lz> <lz> <lz>.