COMPOSITIONAL DISORDERING OF GAAS-ALXGA1-XAS SUPERLATTICE BY GA FOCUSED ION-BEAM IMPLANTATION AND ITS APPLICATION TO SUB-MICRON STRUCTURE FABRICATION

被引：71
作者：
HIRAYAMA, Y
SUZUKI, Y
TARUCHA, S
OKAMOTO, H
机构：
来源：
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS | 1985年 / 24卷 / 07期
关键词：
D O I：
10.1143/JJAP.24.L516
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
引用
收藏
页码：L516 / L518
页数：3
相关论文
共 10 条
  • [1] CAMRAS MD, 1983, 1982 INT S GAAS REL, P233
  • [2] DISORDER OF AN ALAS-GAAS SUPER-LATTICE BY SILICON IMPLANTATION
    COLEMAN, JJ
    DAPKUS, PD
    KIRKPATRICK, CG
    CAMRAS, MD
    HOLONYAK, N
    [J]. APPLIED PHYSICS LETTERS, 1982, 40 (10) : 904 - 906
  • [3] HASHIMOTO H, 1984, 16TH C SOL STAT DEV, P121
  • [4] INTERDIFFUSION OF AL AND GA IN SI-IMPLANTED GAAS-ALAS SUPERLATTICES
    HIRAYAMA, Y
    HORIKOSHI, Y
    OKAMOTO, H
    [J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1984, 23 (12): : 1568 - 1572
  • [5] Kendall D. L., 1968, SEMICONDUCT SEMIMET, V4
  • [6] LAIDIG WD, 1981, APPL PHYS LETT, V38, P776, DOI 10.1063/1.92159
  • [7] DISORDER OF AN ALXGA1-XAS-GAAS SUPERLATTICE BY DONOR DIFFUSION
    MEEHAN, K
    HOLONYAK, N
    BROWN, JM
    NIXON, MA
    GAVRILOVIC, P
    BURNHAM, RD
    [J]. APPLIED PHYSICS LETTERS, 1984, 45 (05) : 549 - 551
  • [8] OPTICAL-PROPERTIES OF SUPERLATTICE AND MQW LASER DIODE
    OKAMOTO, H
    [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1985, 3 (02): : 687 - 693
  • [9] OKAMOTO H, 1983, JPN J APPL PHYS, V22, pL767
  • [10] SELF-DIFFUSION IN GALLIUM-ARSENIDE
    PALFREY, HD
    BROWN, M
    WILLOUGHBY, AFW
    [J]. JOURNAL OF ELECTRONIC MATERIALS, 1983, 12 (05) : 863 - 877
1