COMPOSITIONAL DISORDERING OF GAAS-ALXGA1-XAS SUPERLATTICE BY GA FOCUSED ION-BEAM IMPLANTATION AND ITS APPLICATION TO SUB-MICRON STRUCTURE FABRICATION

被引：71

作者：

HIRAYAMA, Y

SUZUKI, Y

TARUCHA, S

OKAMOTO, H

机构：

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS | 1985年 / 24卷 / 07期

关键词：

D O I：

10.1143/JJAP.24.L516

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：L516 / L518

页数：3

共 10 条

[1]

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[8] OPTICAL-PROPERTIES OF SUPERLATTICE AND MQW LASER DIODE [J].

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[9]

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[10] SELF-DIFFUSION IN GALLIUM-ARSENIDE [J].

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