A COMPARATIVE-STUDY OF NONRELATIVISTIC AND RELATIVISTIC 5D ATOMS AS IMPURITIES IN SILICON

[1] ELECTRONIC-STRUCTURE OF GOLD SUBSTITUTIONAL IMPURITY IN SILICON [J]. JOURNAL OF PHYSICS C-SOLID STATE PHYSICS, 1984, 17 (29): : L771 - L774

[2] WATSON-SPHERE-TERMINATED MODEL APPLIED TO THE AUO AND PT- SUBSTITUTIONAL IMPURITIES IN SILICON [J]. PHYSICAL REVIEW B, 1984, 30 (12): : 7284 - 7286

[3] RELATIVISTIC CALCULATION OF THE ELECTRONIC-STRUCTURE OF UF6 [J]. JOURNAL OF CHEMICAL PHYSICS, 1979, 71 (01) : 32 - 41

[4] CARTLING BG, 1975, J PHYS C SOLID STATE, V8, P3183, DOI 10.1088/0022-3719/8/19/018

[5] ENERGY-LEVELS IN SILICON [J]. ANNUAL REVIEW OF MATERIALS SCIENCE, 1980, 10 : 157 - 228

[6] INCIDENCE OF THE RELATIVISTIC CORRECTIONS IN ELECTRONIC-PROPERTIES OF 5D COMPOUNDS - MS-X-ALPHA CALCULATIONS ON HEXACHLOROIRIDATES (III AND IV) AND TUNGSTEN TRIOXIDE [J]. INTERNATIONAL JOURNAL OF QUANTUM CHEMISTRY, 1983, 23 (02) : 459 - 464

[7] APPROXIMATE RELATIVISTIC CORRECTION FOR 10-18 ELECTRONS IN ATOMS [J]. JOURNAL OF MOLECULAR SPECTROSCOPY, 1964, 12 (01) : 18 - &

[8] MOLECULAR ORBITAL CALCULATIONS FOR COMPLEXES OF HEAVIER TRANSITION ELEMENTS .I. STUDY OF PARAMETER VARIATIONS IN CASE OF TETRACHLOROPLATINATE(2) [J]. INORGANIC CHEMISTRY, 1967, 6 (02) : 369 - &

[9] Desclaux J. P., 1974, Atomic Data and Nuclear Data Tables, V12, P311, DOI 10.1016/0092-640X(73)90020-X

[10] A MOLECULAR CLUSTER STUDY OF COMPLEX DEFECTS IN SI - THE DIVACANCY AND THE E-CENTER [J]. PHYSICA B & C, 1983, 116 (1-3): : 90 - 94

[1] ELECTRONIC-STRUCTURE OF GOLD SUBSTITUTIONAL IMPURITY IN SILICON [J]. JOURNAL OF PHYSICS C-SOLID STATE PHYSICS, 1984, 17 (29): : L771 - L774

[2] WATSON-SPHERE-TERMINATED MODEL APPLIED TO THE AUO AND PT- SUBSTITUTIONAL IMPURITIES IN SILICON [J]. PHYSICAL REVIEW B, 1984, 30 (12): : 7284 - 7286

[3] RELATIVISTIC CALCULATION OF THE ELECTRONIC-STRUCTURE OF UF6 [J]. JOURNAL OF CHEMICAL PHYSICS, 1979, 71 (01) : 32 - 41

[4] CARTLING BG, 1975, J PHYS C SOLID STATE, V8, P3183, DOI 10.1088/0022-3719/8/19/018

[5] ENERGY-LEVELS IN SILICON [J]. ANNUAL REVIEW OF MATERIALS SCIENCE, 1980, 10 : 157 - 228

[6] INCIDENCE OF THE RELATIVISTIC CORRECTIONS IN ELECTRONIC-PROPERTIES OF 5D COMPOUNDS - MS-X-ALPHA CALCULATIONS ON HEXACHLOROIRIDATES (III AND IV) AND TUNGSTEN TRIOXIDE [J]. INTERNATIONAL JOURNAL OF QUANTUM CHEMISTRY, 1983, 23 (02) : 459 - 464

[7] APPROXIMATE RELATIVISTIC CORRECTION FOR 10-18 ELECTRONS IN ATOMS [J]. JOURNAL OF MOLECULAR SPECTROSCOPY, 1964, 12 (01) : 18 - &

[8] MOLECULAR ORBITAL CALCULATIONS FOR COMPLEXES OF HEAVIER TRANSITION ELEMENTS .I. STUDY OF PARAMETER VARIATIONS IN CASE OF TETRACHLOROPLATINATE(2) [J]. INORGANIC CHEMISTRY, 1967, 6 (02) : 369 - &

[9] Desclaux J. P., 1974, Atomic Data and Nuclear Data Tables, V12, P311, DOI 10.1016/0092-640X(73)90020-X

[10] A MOLECULAR CLUSTER STUDY OF COMPLEX DEFECTS IN SI - THE DIVACANCY AND THE E-CENTER [J]. PHYSICA B & C, 1983, 116 (1-3): : 90 - 94