WET ETCHING OF CUSP STRUCTURES FOR FIELD-EMISSION DEVICES

被引：19
作者：
CADE, NA
LEE, RA
PATEL, C
机构：
来源：
IEEE TRANSACTIONS ON ELECTRON DEVICES | 1989年 / 36卷 / 11期
关键词：
D O I：
10.1109/16.43777
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
引用
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页码：2709 / 2714
页数：6
相关论文
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