CRESCENT INGAASP MESA SUBSTRATE BURIED-HETEROSTRUCTURE LASERS AT 1.55 MU-M

被引：1
|
作者：
FELDMAN, RD
AUSTIN, RF
ORON, M
机构：
来源：
ELECTRONICS LETTERS | 1984年 / 20卷 / 19期
关键词：
D O I：
10.1049/el:19840541
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
引用
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页码：795 / 796
页数：2
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