REPEATED REMOVAL OF THIN-LAYERS OF SILICON BY ANODIC-OXIDATION

被引:35
作者
BARBER, HD
LO, HB
JONES, JE
机构
[1] LINEAR TECHNOL INC,BURLINGTON,ONTARIO,CANADA
[2] MCMASTER UNIV,DEPT ENGN PHYS,HAMILTON 16,ONTARIO,CANADA
[3] BOWMAR CANADA LTD,OTTAWA,ONTARIO,CANADA
关键词
D O I
10.1149/1.2133085
中图分类号
O646 [电化学、电解、磁化学];
学科分类号
081704 ;
摘要
引用
收藏
页码:1404 / 1408
页数:5
相关论文
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