INFLUENCE OF TUNNEL GENERATION PROCESSES ON THE RELAXATION OF THE CAPACITANCE OF METAL-INSULATOR SEMICONDUCTOR STRUCTURES

被引：0
作者：
VYUKOV, LA
SURIS, RA
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SOVIET PHYSICS SEMICONDUCTORS-USSR | 1982年 / 16卷 / 10期
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O469 [凝聚态物理学];
学科分类号：
070205 ;
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页码：1134 / 1137
页数：4
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